Persamaan Ic Irfz44n

More images for Persamaan Ic Irfz44n »

  1. Images For Persamaan Ic Irfz44n
  2. See Full List On Alldatasheet.com
  3. JUAL IRFZ44n,BELI IRFZ44n,HARGA IRFZ44n,DATASHEET IRFZ44n ...
  4. Datasheet Persamaan Transistor

Images For Persamaan Ic Irfz44n

Type Designator: IRFZ44N

Type of Transistor: MOSFET

All Transistors Datasheet. Cross Reference Search. Transistor Database. Radiolasopapersamaan ic irfz44n alibaba com offers 53 ic transistor irfz44n products about 79 of these are integrated circuits 9 are transistors a wide variety of ic transistor irfz44n options are available to you such as surface mount throught hole, persamaan transistor d2499 yang cocok untuk mengganti. Mendapatkan persamaan komponen elektronik yg tak ada dipasaran dalam tempo singkat tanpa harus repot membuka buka 61 356 ribuan lembar datasheet yg, jual irfz44n beli irfz44n harga irfz44n datasheet irfz44n persamaan irfz44n distributor irfz44n komponen irfz44n cari irfz44n, kalau dilihat dari datasheet. IRFZ44N Datasheet N-channel enhancement mode TrenchMOS transistor - NXP Semiconductors Power MOSFET, TRANSYS Electronics Limited IRFZ44NL.

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 41 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 62 nC

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: TO220AB

IRFZ44N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ44N Datasheet (PDF)

0.1. irfz44ns 1.pdf Size:57K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

0.2. irfz44n 1.pdf Size:52K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

0.3. irfz44ns 1.pdf Size:57K _international_rectifier

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

0.4. irfz44npbf.pdf Size:226K _international_rectifier

PD - 94787BIRFZ44NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 17.5ml Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

Persamaan Ic Irfz44n

0.5. irfz44n 1.pdf Size:52K _international_rectifier

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

0.6. irfz44ns.pdf Size:151K _international_rectifier

PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee

0.7. irfz44n.pdf Size:100K _international_rectifier

PD - 94053IRFZ44NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 17.5mG Fast Switching Fully Avalanche RatedID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

0.8. irfz44nlpbf irfz44nspbf.pdf Size:334K _international_rectifier

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

0.9. irfz44npbf.pdf Size:150K _infineon

PD - 94787IRFZ44NPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 17.5m Fully Avalanche RatedG Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely

0.10. irfz44nspbf irfz44nlpbf.pdf Size:334K _infineon

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

0.11. lirfz44n.pdf Size:252K _lrc

LESHAN RADIO COMPANY, LTD.55V N-Channel Mode MOSFET VDS=55V LIRFZ44NRDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedTO-220DGSAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 10

0.12. irfz44ns.pdf Size:257K _inchange_semiconductor

Persamaan Ic Irfz44n

isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Irfz44n

0.13. irfz44n.pdf Size:100K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

Datasheet: IRFZ40, IRFZ40FI, IRFZ42, IRFZ44, IRFZ44A, IRFZ44E, IRFZ44EL, IRFZ44ES, 2SK2837, IRFZ44NL, IRFZ44NS, IRFZ45, IRFZ46N, IRFZ46NL, IRFZ46NS, IRFZ48N, IRFZ48NL.




Persamaan Ic And Transistor - discourse.cornerstone.co.uk

See Full List On Alldatasheet.com

LIST

JUAL IRFZ44n,BELI IRFZ44n,HARGA IRFZ44n,DATASHEET IRFZ44n ...

Last Update

MOSFET: MESS84 | MEE4294-G | MEE3710-G | MEE15N10-G | ME95N03T-G | ME95N03T | ME95N03-G | ME95N03 | ME9435A-G | ME9435A | ME9435-G | ME9435 | ME90N03-G | ME90N03 | ME85P03-G | ME85P03

Datasheet Persamaan Transistor


Comments are closed.